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(R)
THDT6511D
VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
Application Specific Discretes TRANSIENT A.S.D.TM
FEATURES
s
s
s
s
s
s
DUAL ASYMETRICAL TRANSIENT SUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100s HOLDING CURRENT : 150 mA min. BREAKDOWN VOLTAGE : 65 V min. LOW DYNAMIC CHARACTERISTICS STAND CCITT K20 AND LSSGR
SO-8
DESCRIPTION This device has been especially designed to protect subscriber line cards against overvoltage. Two diodes clamp positive overloads while negative surges are suppressed by two protection thyristors. A particular attention has been given to the internal wire bonding. The "4-point" configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. SCHEMATIC DIAGRAM
COMPLIES WITH THE FOLLOWING STANDARDS : CCITT K20 : VDE 0433 : VDE 0878 :
bs O
I3124 :
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od Pr e
2/10s 2/10s 10/1000s 10/1000s
FCC part 68 : BELLCORE TR-NWT-001089 :
10/700s 5/310s 10/700s 5/310s 1.2/50s 1/20s 0.5/700s 0.2/310s 2/10s 2/10s
ct u
(s)
so Ob -
TIP 1
te le
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8 TIP 7 GND 6 GND 5 RING
GND 2 GND 3
1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) 2.5kV 125A (*) 1kV 40A (*)
RING 4
(*) with series resistors or PTC.
August 2001 - Ed: 2
1/6
THDT6511D
ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol IPP Peak pulse current Parameter (see note 1) 10/1000s 5/310s 2/10s t = 300 ms t=1s t=5s Value 40 50 125 10 3.5 1 1 - 55 to + 150 150 260
% I PP
Unit A
ITSM
Non repetitive surge peak on-state current F = 50 Hz F = 50 Hz, 60 x 1 s, 2 mn between pulse Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s
A
ITSM Tstg Tj TL
A C C
Note 1 : Pulse waveform : 10/1000s tr=10s 5/310s tr=5s 2/10s tr=2s
tp=1000s tp=310s tp=10s
100
50
0
THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient
Parameter
ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VBR VBO Parameter Stand-off voltage
Leakage current at stand-off voltage Breakdown voltage Breakover voltage Holding current
VBO VBR VRM IRM VF V
bs O
VF C
IH
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Pr e
du o
(s) ct
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te le
tr
ro P
tp
uc d
Value 170
s) t(
t
Unit C/W
I IF
Forward voltage drop Peak forward voltage
IH
VFP IBO IPP T
Breakover current Peak pulse current Capacitance Temperature coefficient
IBO
Ipp
2/6
THDT6511D
1 - PARAMETERS RELATED TO DIODE LINE / GND Symbol VF VFP IF = 1 A see curve fig. 1 Test conditions tp = 100 s NA NA Min. Typ. Max. 2 NA Unit V V
NA : Non Available 2 - PARAMETERS RELATED TO PROTECTION THYRISTOR Symbol VBR VBO IRM IBO IBO IH T C dV/dt VD = 100 mVRMS F = 1KHz VRM = 63 V tp = 100 s F = 50 Hz RG = 600 150 110 IR = 1mA Tests conditions Min. 65 68 85 100 Typ. Max. Unit V V
Linear ramp up to 67 % of VBR
bs O
let o
Pr e
du o
(s) ct
so Ob -
te le
5
ro P
15
uc d
500 500
450
s) t(
A mA mA mA 10-4/C pF kV / s
3/6
THDT6511D
DYNAMIC CHARACTERISTICS : VFP and VBO Figure 1 :
60 10 5 2
250 ns
10 us 10 ms
t
-85 -100 -130
1 us
200 ns
Under lightning and power crossing test, the device limits the transient voltage to the values indicated in the figure LSSGR TEST DIAGRAM Figure 2 :
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let o
Pr e
du o
(s) ct
so Ob -
te le
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THDT6511D
To stand the LSSGR test requirements, Rp must be 15
4/6
THDT6511D
TYPICAL APPLICATION
RING GENERATOR
-V bat
LINE A T E S T R E L A Y LINE B
PTC
TIP
RING RELAY
PTC
THBT200S
Line A D1
bs O
Line B
let o
od Pr e
ct u
P1
(s)
Tip
so Ob -
te le
THDT6511D
ro P
uc d
Integrated SLIC
s) t(
RING
- For positive surges versus GND (TIP), diode D1 will conduct. - For negative surges versus GND (TIP), protection device P1 will trigger at maximum voltage equal to VBO.
Ring
5/6
THDT6511D
ORDER CODE
THDT
Asymmetrical Trisil Breakdown Voltage
65
1
1
D
RL
Tape & reel Low Dynamic Characteristics
Version
SO-8 Package
PACKAGE MECHANICAL DATA. SO-8 Plastic DIMENSIONS REF. A a1 a2 b b1 C c1 D E e e3 F L M S Millimetres Min. 0.1 0.35 0.19 Typ. Max. Min. 1.75 0.25 0.004 1.65 0.48 0.014 0.25 0.007 0.50 45 (typ) 5.0 0.189 6.2 0.228 1.27 3.81 4.0 0.15 1.27 0.016 0.6 8 (max) Inches Typ. Max. 0.069 0.010 0.065 0.019 0.010 0.020 0.197 0.244 0.050 0.150 0.157 0.050 0.024
MARKING : DT651D PACKAGING : Products supplied in antistatic tube or tape and reel. Weight : 0.08g
bs O
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
let o
Pr e
du o
(s) ct
so Ob -
4.8 5.8
te le
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3.8 0.4
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